Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
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Title
- Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
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Author(s)
- Park, Ah Hyun; Baek, Seung Jae; Kim, Young Won; Chandramohan, S.; Suh, Eun-Kyung; Seo, Tae Hoon
- KIOST Author(s)
- Baek, Seung Jae(백승재)
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Alternative Author(s)
- 백승재
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Publication Year
- 2022-11
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Abstract
- Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricated employing electro-chemical etching and applied as a buffer layer for the development of InGaN/GaN LEDs with high quantum efficiency. Based on the analysis of photoluminescence and micro-Raman spectra, it has been revealed that the overgrown GaN epilayer on the DSE porous GaN has a relatively low TDs and relaxation of compressive stress in comparison to the conventional GaN epilayer. The remarkable improvement in the internal quantum efficiency of the InGaN/GaN LEDs is directly attributable to the strong radiative recombination in InGaN/GaN multi-quantum-wells caused by stress relaxation and TDs annihilation. Our findings indicate that the use of DSE porous GaN as a buffer layer may be a viable approach for producing crystalline GaN epilayers and high-performance LEDs.
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ISSN
- 1932-6203
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URI
- https://sciwatch.kiost.ac.kr/handle/2020.kiost/43461
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DOI
- 10.1371/journal.pone.0277667
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Bibliographic Citation
- PLoS ONE, v.17, no.11, 2022
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Publisher
- Public Library of Science
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Type
- Article
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Language
- English
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Document Type
- Article
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