Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes SCIE SCOPUS
DC Field | Value | Language |
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dc.contributor.author | Park, Ah Hyun | - |
dc.contributor.author | Baek, Seung Jae | - |
dc.contributor.author | Kim, Young Won | - |
dc.contributor.author | Chandramohan, S. | - |
dc.contributor.author | Suh, Eun-Kyung | - |
dc.contributor.author | Seo, Tae Hoon | - |
dc.date.accessioned | 2022-11-28T01:30:07Z | - |
dc.date.available | 2022-11-28T01:30:07Z | - |
dc.date.created | 2022-11-28 | - |
dc.date.issued | 2022-11 | - |
dc.identifier.issn | 1932-6203 | - |
dc.identifier.uri | https://sciwatch.kiost.ac.kr/handle/2020.kiost/43461 | - |
dc.description.abstract | Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricated employing electro-chemical etching and applied as a buffer layer for the development of InGaN/GaN LEDs with high quantum efficiency. Based on the analysis of photoluminescence and micro-Raman spectra, it has been revealed that the overgrown GaN epilayer on the DSE porous GaN has a relatively low TDs and relaxation of compressive stress in comparison to the conventional GaN epilayer. The remarkable improvement in the internal quantum efficiency of the InGaN/GaN LEDs is directly attributable to the strong radiative recombination in InGaN/GaN multi-quantum-wells caused by stress relaxation and TDs annihilation. Our findings indicate that the use of DSE porous GaN as a buffer layer may be a viable approach for producing crystalline GaN epilayers and high-performance LEDs. | - |
dc.description.uri | 1 | - |
dc.language | English | - |
dc.publisher | Public Library of Science | - |
dc.title | Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes | - |
dc.type | Article | - |
dc.citation.title | PLoS ONE | - |
dc.citation.volume | 17 | - |
dc.citation.number | 11 | - |
dc.contributor.alternativeName | 백승재 | - |
dc.identifier.bibliographicCitation | PLoS ONE, v.17, no.11 | - |
dc.identifier.doi | 10.1371/journal.pone.0277667 | - |
dc.identifier.scopusid | 2-s2.0-85142198977 | - |
dc.identifier.wosid | 000926013600089 | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordPlus | EPITAXIAL LATERAL OVERGROWTH | - |
dc.subject.keywordPlus | MULTIPLE-QUANTUM WELLS | - |
dc.subject.keywordPlus | STRESS-RELAXATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | REALIZATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | EPILAYERS | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |